Title :
Very low dark current AlInAs/GaInAs SAGM avalanche photodiodes for 10Gb/s applications
Author :
Lahrichi, Majda ; Derouin, E. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Glastre, G. ; Achouche, M.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM = 0.19 nA), a responsivity of 0.9 A/W (at M = 1), a very low noise (F(M = 10) = 3.3), and a high gain bandwidth (150 GHz).
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; AlInAs-GaInAs; SAGM avalanche photodiodes; dark current; gain bandwidth; noise; responsivity; Avalanche photodiodes; Dark current; Doping; Epitaxial growth; Gain measurement; Indium phosphide; Optical noise; Optical receivers; Photoconductivity; Substrates;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
