Title :
Ge on Si p-i-n photodiodes for a bit rate of up to 25 Gbit/s
Author :
Klinger, Sandra ; Grözing, M. ; Zaoui, W. Sfar ; Berroth, M. ; Kaschel, M. ; Oehme, M. ; Kasper, E. ; Schulze, J.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng. (INT), Univ. of Stuttgart, Stuttgart, Germany
Abstract :
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm. The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Random Bit Sequence (PRBS) length of 27-1, the Bit Error Ratio (BER) is smaller than 10-12.
Keywords :
Ge-Si alloys; p-i-n photodiodes; Ge-Si; bit error ratio; bit rate 25 Gbit/s; flip flop; p-i-n photodiodes; pseudo random bit sequence; wavelength 1550 nm; Bit error rate; Bit rate; CMOS technology; Clocks; Molecular beam epitaxial growth; Optical fiber communication; PIN photodiodes; Signal generators; Testing; Time measurement;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
