• DocumentCode
    1886411
  • Title

    Ge on Si p-i-n photodiodes for a bit rate of up to 25 Gbit/s

  • Author

    Klinger, Sandra ; Grözing, M. ; Zaoui, W. Sfar ; Berroth, M. ; Kaschel, M. ; Oehme, M. ; Kasper, E. ; Schulze, J.

  • Author_Institution
    Inst. of Electr. & Opt. Commun. Eng. (INT), Univ. of Stuttgart, Stuttgart, Germany
  • fYear
    2009
  • fDate
    20-24 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm. The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Random Bit Sequence (PRBS) length of 27-1, the Bit Error Ratio (BER) is smaller than 10-12.
  • Keywords
    Ge-Si alloys; p-i-n photodiodes; Ge-Si; bit error ratio; bit rate 25 Gbit/s; flip flop; p-i-n photodiodes; pseudo random bit sequence; wavelength 1550 nm; Bit error rate; Bit rate; CMOS technology; Clocks; Molecular beam epitaxial growth; Optical fiber communication; PIN photodiodes; Signal generators; Testing; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2009. ECOC '09. 35th European Conference on
  • Conference_Location
    Vienna
  • Print_ISBN
    978-1-4244-5096-1
  • Type

    conf

  • Filename
    5287223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1886411