Title :
Hydrogen interactions with SIMOX
Author :
Myers, S.M. ; Stein, H.J.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Nuclear-reaction profiling was used to examine the reactions of H 2 with SIMOX (separation by implanted oxygen) structures in the temperature range 500-1000°C, and strong H binding within the buried SiO2 layer was observed. These trapping reactions are significant both for their potentially beneficial passivation of electrically active centers and for the indication they provide of defect densities. In separation studies of H in thermal oxides on Si, the authors have quantitatively characterized the interactions of H with Si and O dangling bonds in the SiO2 matrix and at the Si-SiO 2 interface, thereby providing a prediction capability that is believed applicable to SIMOX
Keywords :
chemical analysis by nuclear reactions and scattering; dangling bonds; electron traps; impurity distribution; ion implantation; passivation; semiconductor-insulator boundaries; 500 to 1000 degC; H binding; SIMOX; Si-SiO2 interface; SiO2:H-Si; buried SiO2 layer; dangling bonds; defect densities; nuclear reaction profiling; passivation; trapping reactions; Annealing; Hydrogen; Infrared spectra; Isothermal processes; Laboratories; Paramagnetic resonance; Passivation; Permeability; Temperature control; Temperature distribution;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162833
