• DocumentCode
    1886670
  • Title

    Die stress variation in area array components subjected to accelerated life testing

  • Author

    Roberts, Jordan C. ; Rahim, M. Kaysar ; Hussain, Safina ; Suhling, Jeffrey C. ; Jaeger, Richard C. ; Lall, Pradeep

  • Author_Institution
    Dept. of Mech. Eng., Auburn Univ., Auburn, AL
  • fYear
    2008
  • fDate
    28-31 May 2008
  • Firstpage
    705
  • Lastpage
    713
  • Abstract
    Thermal cycling accelerated life testing is often used to qualify packages for various applications. Finite element life predictions for thermal cycling configurations is challenging due to the complicated temperature/time dependent constitutive relations and failure criteria needed for solders and encapsulants and their interfaces, aging/evolving material behavior (e.g. solders), difficulties in modeling plating finishes, the complicated geometries of typical electronic assemblies, etc. In addition, in-situ measurements of stresses and strains in assemblies subjected to temperature cycling is difficult because of the extreme environmental conditions and the fact that the primary materials/interfaces of interest (e.g. solder joints, die device surface, wire bonds, etc.) are embedded within the assembly (not at the surface). For these reasons, we really know quite little about the evolution of the stresses, strains, and deformations occurring within sophisticated electronic packaging geometries during thermal cycling. In our research, we are using test chips containing piezoresistive stress sensors to continuously characterize the in-situ die surface stress during long-term thermal cycling of several different area array packaging technologies including plastic ball grid array (PGA) components, ceramic ball grid array (CBGA) components, and flip chip on laminate assemblies. The utilized (111) silicon test chips are able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The die stresses are initially measured at room temperature after packaging. The assemblies are then subjected to thermal cycling from -40 to 125 C or from -55 to 125 C for up to 3000 thermal cycles. During the thermal cycling, sensor resistances at critical locations on the die device surface (e.g. die center and die corners) are recorded. From the resistance data, the stresses at each site can be calc- ulated and plotted versus time. The experimental observations show significant cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage. The observed stress variations as a function of thermal cycling duration are also being correlated with the observed delaminations at the die surface (as measured using scanning acoustic microscopy (C-SAM)) and finite element simulations that include material constitutive models that incorporate thermal aging effects.
  • Keywords
    ball grid arrays; flip-chip devices; lead bonding; life testing; solders; area array components; ceramic ball grid array; die device surface; die stress variation; electronic assemblies; electronic packaging geometries; encapsulants; environmental conditions; finite element life predictions; in-situ measurements; plastic ball grid array; solder joints; temperature cycling; temperature-time dependent constitutive relations; thermal cycling accelerated life testing; wire bonds; Aging; Assembly; Electronic packaging thermal management; Electronics packaging; Finite element methods; Life estimation; Life testing; Sensor arrays; Stress measurement; Thermal stresses; Ball Grid Array; Flip Chip; Reliability; Stress; Test Chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems, 2008. ITHERM 2008. 11th Intersociety Conference on
  • Conference_Location
    Orlando, FL
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-1700-1
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2008.4544337
  • Filename
    4544337