Nearly chirp-free electroabsorption modulation of an InGaAsP asymmetric multi-quantum-well structure

Author

Lay, T.S. ; Fan, H.P. ; Hsu, H.T. ; Chang, T.Y.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2002

fDate

2002

Firstpage

269

Lastpage

271

Abstract

We report the differential absorption (Δα) spectra of an InGaAsP asymmetric multi-quantum-well structure at different reverse bias. Also, the differential refraction index (Δn) spectra have been obtained by calculating Δα through a Kramers-Kronig transform. The e1-hh1 optical transition originating from the 15 nm wells has a 20 nm red-shift. The Δα has a value ∼350 cm^-1 at 1670 nm wavelength, and Δn has a value ∼0 under different reverse bias.

Keywords

III-V semiconductors; Kramers-Kronig relations; electroabsorption; gallium arsenide; indium compounds; infrared spectra; modulation spectra; red shift; refractive index; semiconductor quantum wells; 15 nm; 1670 nm; InGaAsP; InGaAsP asymmetric multi-quantum-well structure; Kramers-Kronig transform; differential absorption spectra; differential refraction index spectra; e1-hh1 optical transition; nearly chirp-free electroabsorption modulation; red-shift; reverse bias; Absorption; Chirp modulation; Indium gallium arsenide; Laser tuning; Nonlinear optics; Optical refraction; Optical sensors; Quantum cascade lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014360

Filename

1014360