• DocumentCode
    1886767
  • Title

    A SIMS study of the deuterium distribution in SIMOX buried oxides

  • Author

    Campisi, G.J. ; Roitman, P. ; Simons, D. ; Krull, W.A.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • fYear
    1991
  • fDate
    1-3 Oct 1991
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    SIMS (secondary ion mass spectrometry) analysis of deuterium annealed SIMOX (separation by implanted oxygen) samples was used to investigate the interaction of hydrogen with the buried oxide. Deuterium diffused into the SIMOX buried oxide and reacted with the dangling Si bonds, the precursors to oxide traps, to form Si-D. SIMS analysis of deuterium shows that these bonds are distributed uniformly in the buried oxides of all samples examined, including as-implanted samples. Thus, oxygen vacancies and traps are contained throughout the bulk of the SIMOX buried oxides
  • Keywords
    annealing; dangling bonds; impurity distribution; impurity-defect interactions; ion implantation; secondary ion mass spectra; semiconductor-insulator boundaries; vacancies (crystal); SIMOX buried oxides; SIMS; Si-D; Si-SiO2; dangling Si bonds; oxide traps; vacancies; Annealing; Degradation; Deuterium; Electrons; Hydrogen; Implants; Laboratories; NIST; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1991. Proceedings, 1991., IEEE International
  • Conference_Location
    Vail Valley, CO
  • Print_ISBN
    0-7803-0184-6
  • Type

    conf

  • DOI
    10.1109/SOI.1991.162834
  • Filename
    162834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1886767