Title :
Dedicated Instrumentation for Single-Electron Effects Detection in Si Nanocrystal Memories
Author :
Pace, C. ; Crupi, F. ; Lombardo, S. ; Giusi, G.
Author_Institution :
DEIS, Calabria Univ., Arcavacata di Rende
Abstract :
In this paper we propose a purposely designed instrumentation and the experimental set-up for the detection of single-electron phenomena in solid-state non-volatile memories based on silicon nanocrystals floating gate MOSFET. The stepwise evolution of the drain current of a memory cell, after a "write" operation, is monitored by means of a purposely designed low noise acquisition system with a bandwidth up to 10 kHz. The advantage of the measurement system background noise and bandwidth over traditional semiconductor parameter analyzer performance is evident on the detection and classification of single-electron events
Keywords :
data acquisition; elemental semiconductors; integrated circuit measurement; random-access storage; silicon; MOSFET; Si; acquisition system; background noise; dedicated instrumentation; nanocrystal memories; non-volatile memories; semiconductor parameter analyzer; single-electron effects detection; single-electron phenomena; solid-state memories; wafer-level measurements; Bandwidth; Instruments; MOSFET circuits; Monitoring; Nanocrystals; Noise measurement; Nonvolatile memory; Semiconductor device noise; Silicon; Solid state circuits; MOSFET memory integrated circuits; non-volatile memories; wafer-level measurements;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2006. IMTC 2006. Proceedings of the IEEE
Conference_Location :
Sorrento
Print_ISBN :
0-7803-9359-7
Electronic_ISBN :
1091-5281
DOI :
10.1109/IMTC.2006.328280
