Theoretical and experimental investigation of bias and temperature effects on high resistivity silicon substrates for RF applications

Theoretical and experimental comparisons show that the RF characteristics of a CPW in Schottky contact with a HR Si substrate are bias independent for all practical temperatures, up to 100/spl deg/C. Bias dependence on the RF characteristics of the transmission line are noticed above 100/spl deg/C when the ohmic dielectric loss of the HR Si becomes the dominant loss mechanism on the coplanar structures under study. This is a direct result of the increase of intrinsic carrier density.