• DocumentCode
    1887199
  • Title

    A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM

  • Author

    Takashima, D. ; Shiga, H. ; Hashimoto, Dieter ; Miyakawa, Takayuki ; Shiratake, S. ; Hoya, K. ; Ogiwara, R. ; Takizawa, R. ; Doumae, S. ; Fukuda, Reo ; Watanabe, Yoshihiro ; Fujii, Shohei ; Ozaki, Takashi ; Kanaya, Haruichi ; Shuto, S. ; Yamakawa, Kiyoshi

  • Author_Institution
    Toshiba, Yokohama, Japan
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    262
  • Lastpage
    263
  • Abstract
    A ferroelectric capacitor overdrive with shield-bitline drive for 1.3 V chain FeRAM has been verified using a 0.13 ¿m 576 Kb test chip with 0.719 ¿m2 cell. This technique applies 0.24 V bias to ferroelectric capacitors without increasing stress and bitline capacitance. The measured tail-to-tail cell signal is improved by 100 mV and doubled in 1.3 V array operation.
  • Keywords
    ferroelectric capacitors; random-access storage; FeRAM; ferroelectric capacitor overdrive; scalable shield-bitline-overdrive technique; shield-bitline drive; size 0.13 mum; tail-to-tail cell signal; voltage 0.24 V; voltage 1.3 V; voltage 100 mV; Capacitance; Capacitors; Degradation; Drives; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433950
  • Filename
    5433950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1887199