Single transverse mode operation of 1.55-μm buried heterostructure VCSELs on GaAs substrate

Author

Ohiso, Y. ; Okamoto, H. ; Iga, R. ; Kishi, K. ; Amano, C.

Author_Institution

Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2002

fDate

2002

Firstpage

299

Lastpage

302

Abstract

We report single transverse mode operation of 1.55-μm buried heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer fusion enables us to fabricate BH InP-based layers on a GaAs/AlAs distributed Bragg reflector. Since the BH has an appropriate differential refractive index, a VCSEL with a large emission area exhibits single mode operation up to about 0.1-mW optical output power. This device also exhibits minimum threshold current around room temperature and 75°C maximum continuous-wave operation temperature.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; refractive index; surface emitting lasers; 0.1 mW; 1.55 micron; 75 degC; InP-GaAs-AlAs; InP/GaAs/AlAs; buried heterostructure VCSELs; differential refractive index; distributed Bragg reflector; emission area; maximum continuous-wave operation temperature; optical output power; single mode operation; single transverse mode operation; thin-film wafer fusion; threshold current; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Gallium arsenide; Laser fusion; Laser modes; Refractive index; Substrates; Surface emitting lasers; Temperature; Transistors; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014382

Filename

1014382