Title :
1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate
Author :
Arai, Masakazu ; Kondo, Takashi ; Azuchi, Munechika ; Uchida, Takeshi ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We demonstrated a single-mode multiple wavelength VCSEL array with highly strained GaInAs/GaAs QWs on a patterned GaAs substrate in a new wavelength band of 1.1-1.2 μm. The emission wavelength of a 4-channel array ranges from 1137 nm to 1144 nm. We carried out data transmission experiment through a 5 km single mode fiber with 2.5 Gbps/channel. The total throughput reaches 10 Gbps. This novel WDM source would be a good candidate for WDM-LAN beyond 10 Gbps. In addition, we show a potential extension of the wavelength span for multiple wavelength VCSEL arrays by optimizing the pattern shape of a substrate.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical fibre LAN; optical transmitters; semiconductor laser arrays; surface emitting lasers; wavelength division multiplexing; 1.1 to 1.2 micron; 10 Gbit/s; 1137 to 1144 nm; 2.5 Gbit/s; 5 km; GaInAs-GaAs; WDM-LAN; data transmission experiment; emission wavelength; laser array; multiple-wavelength vertical cavity surface emitting laser; pattern shape; patterned substrate; single mode fiber; single-mode VCSEL array; total throughput; wavelength span; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; MOCVD; Optical arrays; Optical surface waves; Phased arrays; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014384
