A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications

Author

Valdes-Garcia, A. ; Nicolson, Sean ; Jie-Wei Lai ; Natarajan, Arutselvan ; Ping-Yu Chen ; Reynolds, S. ; Zhan, Jing-Hong Conan ; Floyd, Brian

Author_Institution

IBM T. J. Watson, Yorktown Heights, NY, USA

fYear

2010

fDate

7-11 Feb. 2010

Firstpage

218

Lastpage

219

Abstract

A 60 GHz phased-array transmitter for multi-Gb/s non-line-of-sight links is fully integrated in a 0.12 Â¿m SiGe BiCMOS process. It consists of an up-conversion chain with synthesizer, a power distribution tree and 16 phase-shifting front-ends. The IC occupies 44 mm², draws 1.2 W excluding front-ends, and delivers 9 to 13.5 dBm OP_1dB per element drawing 164 to 313 mW per front-end.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave phase shifters; radio links; radio transmitters; IC; SiGe; SiGe BiCMOS 16-element phased-array transmitter; frequency 60 GHz; non-line-of-sight links; phase-shifting front-ends; power 1.2 W; power 164 mW to 313 mW; power distribution tree; size 0.12 mum; up-conversion chain; Antenna measurements; BiCMOS integrated circuits; Germanium silicon alloys; Phase measurement; Phase shifters; Power generation; Power measurement; Radio frequency; Silicon germanium; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4244-6033-5

Type

conf

DOI

10.1109/ISSCC.2010.5433956

Filename

5433956