• DocumentCode
    1887438
  • Title

    Theoretical prediction of the electronic properties of silicon fullerenes

  • Author

    Pigueras, M.C. ; Crespo, Raul ; Tomas, F.

  • Author_Institution
    Universitat de Valencia
  • fYear
    1994
  • fDate
    24-29 July 1994
  • Firstpage
    191
  • Lastpage
    191
  • Abstract
    Summary form only given. High symmetry silicon clusters present currently intense interest because of the possibility they present properties similar to those displayed by fullerenes. Thermodynamic studies have shown that the buckminsterfullerene structure of Si6o is much more stable than other suggested structures. We present here a detailed investigation of the structure and electronic properties of silicon cluster analogous to fullerenes. We have made use of AMI method to obtain reliable geometrical parameters. The calculated valence effective Hamiltonian (VEH) electronic structures are used to predict ionization potentials, electron affinities, HOMO-LUMO energy gaps and first allowed transitions. Several analogies and differences between silicon and carbon fullerenes are pointed out.
  • Keywords
    Doping; Electron optics; Filling; Ionization; Photoelectricity; Silicon; Spectroscopy; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
  • Conference_Location
    Seoul, Korea
  • Type

    conf

  • DOI
    10.1109/STSM.1994.834997
  • Filename
    834997