Title :
GaN quasimonolithic two-stage power amplifier with 8–18 GHz frequency band
Author :
Glazunov, V.V. ; Zykova, G.S. ; Myakishev, Y.B. ; Rakov, Y.N. ; Monchares, N.V. ; Budakov, V.G.
Author_Institution :
JSC Oktava, Novosibirsk, Russia
Abstract :
This paper presents the results of development of experimental samples of GaN quasi-monolithic IC (QMIC) two-stage power amplifier with the output power up to 1.5 W and the gain 12-16 dB in 8-18 GHz frequency band.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; monolithic integrated circuits; wide band gap semiconductors; GaN; frequency 8 GHz to 18 GHz; gain 12 dB to 16 dB; quasimonolithic IC; quasimonolithic two-stage power amplifier; Electronic mail; Gain; Gallium nitride; HEMTs; Logic gates; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
