• DocumentCode
    1887541
  • Title

    Breakdown of the rigid-band picture in the alkali-metal-doped C/sub 60/; A/sub 2/C/sub 60/ and A/sub 4/C/sub 60/

  • Author

    Suzuki, Satoshi ; Nakao, Kengo

  • Author_Institution
    University of Tsukuba
  • fYear
    1994
  • fDate
    24-29 July 1994
  • Firstpage
    193
  • Lastpage
    193
  • Abstract
    Summary form only given. Alkali-metal-doped C/sub 60/, A/sub x/C/sub/, is extensively studied in connection with the superconductivity occurring at x=3 with T, - 30K. As a result, it has been shown that the rigid-band picture can´t be applicable to A_-Cro. That is, although A__CrO is expected to be a metal for x=I, 2, 3, 4, and 5 from the results of the theoretical calculations, a number of experimental studies show that A/sub x/C/sub 60/ is a semiconductor for x=2 and 4. The purpose of the present work is to elucidate why A/sub x/C/sub 60/ is a semiconductor for x=2 and 4. We introduce the model which exhaustively takes account of the results of the first-principle calculations; the electron-electron interaction and the electron-phonon interaction are properly included in the present analysis. We find that the ground state of A/sub 2/C/sub 60/ and A/sub 4/C/sub 60/ is a nonmagnetic semiconductor with the energy gap slightly larger than 0.1 eV. This comes from the fact that the electron-phonon interaction is considerably larger than the Hund coupling between the conduction electrons, resulting in the intramolecular negative-U effect. Furthermore, it is pointed out that the space group of the crystal structure is Pa3 if the host C/sub 60/ lattice is fcc; this is certainly the case of Na/sub 2/C/sub 60/
  • Keywords
    Charge carrier processes; Chemicals; Electric breakdown; Electrons; Helium; Kinetic theory; Lattices; Materials science and technology; Microscopy; Stationary state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
  • Conference_Location
    Seoul, Korea
  • Type

    conf

  • DOI
    10.1109/STSM.1994.835001
  • Filename
    835001