• DocumentCode
    1887558
  • Title

    Influence of sink-source channel´s width on Ft and Fmax limit frequencies of AlGaN/GaN HEMT

  • Author

    Torkhov, N.A. ; Bozhkov, V.G.

  • Author_Institution
    Sci.-Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    It is shown that increasing of full width W of the sink-source channel in Al30Ga70N/GaN HEMT at the expense of the increase of n (a number of sections) results to decreasing of Gmax(F) and H21(F). Therefore, amplifying limit frequencies of current Ft and power Fmax also decrease. Ft and Fmax decrease at the increasing of n is related with increasing parasitic parameters of Al30Ga70N/GaN HEMT.
  • Keywords
    aluminium compounds; gallium compounds; high electron mobility transistors; Al30Ga70N-GaN; AlGaN/GaN HEMT; limit frequencies; parasitic parameters; sink-source channel; Aluminum gallium nitride; Electronic mail; Equivalent circuits; Gallium nitride; HEMTs; Integrated circuit modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1887558