Title :
Parasitic current channel suppression and output power increasing in pHEMT´s
Author :
Lukashin, V.M. ; Pashkovskiy, A.B. ; Zhuravlev, K.S. ; Toropov, A.I. ; Lapin, V.G.
Author_Institution :
Fed. State Unitary Corp. R&PC, Fryazino, Russia
Abstract :
The first result of power pHEMT´s with the optimized quantum well and additional potential barrier development have been submitted. High power transistor with gate length about (0.4...0.5) μm and 0.8 mm width demonstrates specific output power higher than 1.4 W/mm, associated gain higher than 8 dB and efficiency about 50% at 10 GHz.
Keywords :
microwave field effect transistors; microwave power transistors; power HEMT; quantum well devices; frequency 10 GHz; high power transistor; parasitic current channel suppression; power pHEMT; quantum well optimization; Electronic mail; Gallium arsenide; Logic gates; MODFETs; PHEMTs; Physics;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
