Title :
30–40 GHz control GaAs MMIC
Author :
Lee, A.I. ; Truhov, D.A. ; Povorozhenko, P.A. ; Tolstolutsky, S.I.
Author_Institution :
Res. Inst. of Radiocommun., Rostov-on-Don, Russia
Abstract :
The designed and fabricated SPDT and 6-bit attenuator MMIC´s based on 0.8 μm GaAs MESFET technology are presented.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC; gallium arsenide; millimetre wave integrated circuits; MESFET technology; SPDT fabrication; attenuator MMIC; frequency 60 GHz to 40 GHz; size 0.8 mum; word length 6 bit; Attenuation; Attenuators; Gallium arsenide; Insertion loss; MESFETs; MMICs; Radiofrequency integrated circuits;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
