Title :
A fully integrated 2×1 dual-band direct-conversion transceiver with dual-mode fractional divider and noise-shaping TIA for mobile WiMAX SoC in 65nm CMOS
Author :
Deguchi, J. ; Miyashita, D. ; Ogasawara, Yasuo ; Takemura, G. ; Iwanaga, Motoki ; Sami, K. ; Ito, Ryouta ; Wadatsumi, Junji ; Tsuda, Y. ; Oda, Shoichiro ; Kawaguchi, Shogo ; Itoh, N. ; Hamada, Mohamed
Author_Institution :
Toshiba, Kawasaki, Japan
Abstract :
A fully integrated 2×1 dual-band direct-conversion transceiver for a mobile WiMAX SoC in a 65 nm CMOS technology is presented. Inductorless LO distribution by compact dual-mode fractional dividers is introduced. Total NF of 3.8 dB is achieved by a noise-shaping transimpedance amplifier. It consumes 214.8 mW for 1 TX at +1 dBm and 214.1 mW for 2 RX, and occupies 2.3×6.72 mm2.
Keywords :
CMOS integrated circuits; WiMax; operational amplifiers; system-on-chip; transceivers; CMOS technology; compact dual mode fractional dividers; fully integrated dual band direct-conversion transceiver; inductorless LO distribution; mobile WiMAX SoC; noise figure 3.8 dB; noise shaping transimpedance amplifier; power 214.1 mW; power 214.8 mW; size 65 nm; 1f noise; CMOS technology; Circuits; Dual band; Frequency; Inverters; Noise shaping; Transceivers; Voltage-controlled oscillators; WiMAX;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433966
