• DocumentCode
    1887724
  • Title

    Modeling heat transport in thermal interface materials enhanced with MEMS based microinterconnects

  • Author

    Zhou, Fan ; Arunasalam, Parthiban ; Murray, Bruce ; Sammakia, Bahgat

  • Author_Institution
    Dept. of Mech. Eng., State Univ. of New York at Binghamton, Binghamton, NY
  • fYear
    2008
  • fDate
    28-31 May 2008
  • Firstpage
    1063
  • Lastpage
    1070
  • Abstract
    Thermal management of device level packaging continues to present many technical challenges. In the typical chip heat sink assembly, the highest resistance to heat flow comes from the thermal interface material (TIM). The thermal conductivities of TIMs remain in the range of 1-4 W/mK due to the properties and structure of small dispersed solids in polymer matrices. As a result of the rising design power and heat flux at the silicon die, new ways to improve the effective in situ thermal conductivity of interface materials are required. This paper will introduce a unique TIM enhanced with ultrahigh density wafer level thin film compliant interconnects named smart three axis compliant (STAC) interconnects. The MEMS technology based STAC interconnect is directly fabricated onto a silicon wafer and embedded into the TIM to provide an enhanced conductive path between the die/package and the heat sink. Numerical and analytical analyses of the thermal conduction in the TIM embedded with STAC interconnects are performed. The objective of the study is to provide comprehensive design strategies for effective implementation of this type of TIM for specific applications. Parametric studies are conducted to examine the thermal conductivity of the microinterconnect enhanced TIM for varying materials, configurations, and geometry of the microinterconnects. For the modeling, a periodic element model of chip-TIM configuration with top heat sink is developed and maximum temperatures are determined in order to evaluate the conductive effect of the microinterconnect. In addition, an investigation of the conductive transport in a more complicated chip stack is considered. A 3-D thermal analysis is conducted for a multi-chip stack package with and without through-silicon-vias. The numerical results show that the microinterconnects significantly improve the thermal performance of the TIM. Finally, further steps toward achieving a chip-level design optimization and fabrication process using- microinterconnects structured TIM is proposed.
  • Keywords
    heat sinks; integrated circuit interconnections; integrated circuit packaging; micromechanical devices; numerical analysis; thermal analysis; thermal conductivity; MEMS based microinterconnects; chip-level design; device level packaging; die-package analysis; fabrication process; heat sink assembly; heat transport; in situ thermal conductivity; periodic element model; polymer matrices; silicon wafer; smart three axis compliant interconnects; thermal analysis; thermal interface materials; thermal management; Conducting materials; Heat sinks; Micromechanical devices; Packaging; Performance analysis; Resistance heating; Silicon; Thermal conductivity; Thermal management; Thermal resistance; MEMS; STAC interconnect; numerical modeling; thermal interface material; thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems, 2008. ITHERM 2008. 11th Intersociety Conference on
  • Conference_Location
    Orlando, FL
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-1700-1
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2008.4544380
  • Filename
    4544380