Molecular dynamics simulation of phonon scattering at rough semiconductor interfaces

Author

Sun, Lin ; Murthy, Jayathi Y.

Author_Institution

Sch. of Mech. Eng., Purdue Univ., West Lafayette, IN

fYear

2008

fDate

28-31 May 2008

Firstpage

1078

Lastpage

1086

Abstract

Detailed phonon transport at a rough semiconductor interface is studied by the molecular dynamics method. The simulation results show that phonon transmission coefficient is a strong function of frequency, roughness characteristic length and atomic structure. When the roughness characteristic length is comparable to the phonon wave length, the phonon transmission is decreased significantly. Complex phonon mode conversions and wave interference effects are observed.

Keywords

atomic structure; interface roughness; molecular dynamics method; phonons; semiconductors; atomic structure; frequency function; molecular dynamics simulation; phonon scattering; phonon transmission coefficient; phonon transport; phonon wave length; rough semiconductor interfaces; roughness characteristic length; wave interference effects; Acoustic scattering; Delta modulation; Frequency; Light scattering; Optical scattering; Phonons; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; interface; molecular dynamics; phonon; transmission;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal and Thermomechanical Phenomena in Electronic Systems, 2008. ITHERM 2008. 11th Intersociety Conference on

Conference_Location

Orlando, FL

ISSN

1087-9870

Print_ISBN

978-1-4244-1700-1

Electronic_ISBN

1087-9870

Type

conf

DOI

10.1109/ITHERM.2008.4544382

Filename

4544382