Title :
Molecular dynamics simulation of phonon scattering at rough semiconductor interfaces
Author :
Sun, Lin ; Murthy, Jayathi Y.
Author_Institution :
Sch. of Mech. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Detailed phonon transport at a rough semiconductor interface is studied by the molecular dynamics method. The simulation results show that phonon transmission coefficient is a strong function of frequency, roughness characteristic length and atomic structure. When the roughness characteristic length is comparable to the phonon wave length, the phonon transmission is decreased significantly. Complex phonon mode conversions and wave interference effects are observed.
Keywords :
atomic structure; interface roughness; molecular dynamics method; phonons; semiconductors; atomic structure; frequency function; molecular dynamics simulation; phonon scattering; phonon transmission coefficient; phonon transport; phonon wave length; rough semiconductor interfaces; roughness characteristic length; wave interference effects; Acoustic scattering; Delta modulation; Frequency; Light scattering; Optical scattering; Phonons; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; interface; molecular dynamics; phonon; transmission;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems, 2008. ITHERM 2008. 11th Intersociety Conference on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1700-1
Electronic_ISBN :
1087-9870
DOI :
10.1109/ITHERM.2008.4544382
