Title :
Negative resistance of rectifying metal-semiconductor junction
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
It was shown that in the region of direct current with Uf>;qφb there is the negative resistance part at static VAC of rectifying metal-semiconductor junctions. Theoretical calculation reveals that negative resistance on the direct brunch of VAC is caused by potential step in order to transfer ballistic electrons through a thin base (~0.1 um) of the diode. Analysis of transferring time τT(E) and reflecting time τR(E) makes it possible to calculate estimating frequency band <; 1 THz.
Keywords :
semiconductor junctions; submillimetre wave diodes; ballistic electrons; diode; negative resistance; rectifying metal-semiconductor junction; reflecting time analysis; static VAC; transferring time analysis; Electric potential; Electronic mail; Frequency estimation; Gallium arsenide; Junctions; Resistance; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
