DocumentCode :
1887918
Title :
A 2.7e- temporal noise 99.7% shutter efficiency 92dB dynamic range CMOS image sensor with dual global shutter pixels
Author :
Yasutomi, Keita ; Itoh, Shintaro ; Kawahito, S.
Author_Institution :
Shizuoka Univ., Hamamatsu, Japan
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
398
Lastpage :
399
Abstract :
A dual global shutter CIS with pinned storage diode and floating diffusion memory enables a low noise level of 2.7e- and wide dynamic range of 92dB. Dual doping pinned diodes with a shielding structure attain a high shutter efficiency of 99.7%.
Keywords :
CMOS image sensors; CMOS image sensor; dual global shutter pixels; floating diffusion memory; noise figure 92 dB; pinned storage diode; shutter efficiency; temporal noise; CMOS image sensors; Charge transfer; Dark current; Diodes; Doping; Dynamic range; Noise cancellation; Noise level; Photodiodes; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5433976
Filename :
5433976
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1887918
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