DocumentCode :
1887946
Title :
Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy
Author :
Sun, Y.T. ; Napierala, J. ; Lourdudoss, S.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
fYear :
2002
fDate :
2002
Firstpage :
339
Lastpage :
342
Abstract :
Selective area growth of InP is carried out on an InP precoated [001] 2° off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si3N4 mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.
Keywords :
III-V semiconductors; crystallography; indium compounds; semiconductor growth; silicon; substrates; vapour phase epitaxial growth; InP; InP growth; InP precoated Si substrate; InP-Si; InP-Si3N4; Si; Si3N4 mask; asymmetric growth profile; crystallographic model; crystallographic quality improvement; epitaxial lateral overgrowth; gas phase supersaturation; low pressure hydride VPE system; selective area growth; vapor phase epitaxy system; Crystallography; Epitaxial growth; Epitaxial layers; Indium phosphide; Lattices; Plasma temperature; Scanning electron microscopy; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014410
Filename :
1014410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1887946
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