Title :
New doping technology-plasma doping-for next generation CMOS process with ultra shallow junction-LSI yield and surface contamination issues
Author :
Takase, Michihiko ; Mizuno, Bunji
Author_Institution :
Central Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Plasma doping method as a candidate to alternate conventional ion implantation has been proposed. LSI yield and surface contamination were confirmed for realizing mass production. This method has ultra low energy capability with very high throughput
Keywords :
CMOS integrated circuits; ULSI; integrated circuit yield; ion implantation; plasma applications; surface contamination; LSI yield; doping technology; mass production; next generation CMOS process; plasma doping method; surface contamination; ultra shallow junction; ultralow energy capability; unconventional ion implantation; very high throughput; CMOS process; CMOS technology; Doping; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma properties; Plasma sources; Plasma temperature; Throughput;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664494
