DocumentCode :
18880
Title :
High-Performance Metal-Insulator-Metal Tunnel Diode Selectors
Author :
Govoreanu, B. ; Adelmann, C. ; Redolfi, A. ; Leqi Zhang ; Clima, S. ; Jurczak, Malgorzata
Author_Institution :
imec, Leuven, Belgium
Volume :
35
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
63
Lastpage :
65
Abstract :
We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta2O5, for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 105 A/cm2, high nonlinearity, and fast turn-on and turn-off times in the below-ns range. A very good uniformity for structures down to 40 nm size and excellent ac endurance is demonstrated, well exceeding the stand-alone nonvolatile memory requirements.
Keywords :
MIM devices; atomic layer deposition; random-access storage; tunnel diodes; AC endurance; bidirectional selector application; drive current; high-performance metal-insulator-metal tunnel diode selectors; nonlinearity; resistive switching memory; stand-alone nonvolatile memory requirements; turn-off time; turn-on time; ultrathin atomic layer deposition; Arrays; Nonvolatile memory; Optical switches; Random access memory; Reliability; Tunneling; Metal-insulator-metal (MIM); one-selector one-resistor (1S1R) cell; resistive RAM; selector; tunnel diode;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2291911
Filename :
6680661
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=18880
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