High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

Author

Govoreanu, B. ; Adelmann, C. ; Redolfi, A. ; Leqi Zhang ; Clima, S. ; Jurczak, Malgorzata

Author_Institution

imec, Leuven, Belgium

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

63

Lastpage

65

Abstract

We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta₂O₅, for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 10⁵ A/cm², high nonlinearity, and fast turn-on and turn-off times in the below-ns range. A very good uniformity for structures down to 40 nm size and excellent ac endurance is demonstrated, well exceeding the stand-alone nonvolatile memory requirements.

Keywords

MIM devices; atomic layer deposition; random-access storage; tunnel diodes; AC endurance; bidirectional selector application; drive current; high-performance metal-insulator-metal tunnel diode selectors; nonlinearity; resistive switching memory; stand-alone nonvolatile memory requirements; turn-off time; turn-on time; ultrathin atomic layer deposition; Arrays; Nonvolatile memory; Optical switches; Random access memory; Reliability; Tunneling; Metal-insulator-metal (MIM); one-selector one-resistor (1S1R) cell; resistive RAM; selector; tunnel diode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2291911

Filename

6680661