Title :
Class E high-efficiency power amplifiers, from HF to microwave
Author_Institution :
Design Autom. Inc., Lexington, MA, USA
Abstract :
Class E power amplifiers achieve significantly higher efficiency than for conventional class B or C. Class E operates the transistor as an on/off switch and shapes the voltage and current waveforms to prevent simultaneous high voltage and high current in the transistor; that minimizes the power dissipation, especially during the switching transitions. In the published low-order class-E circuit, a transistor performs well at frequencies up to about 70% of its frequency of good class-B operation. An unpublished higher-order class E circuit operates well up to about double that frequency. The paper covers circuit operation, explicit design equations for the low-order class E circuit, optimization principles, and experimental results.
Keywords :
UHF power amplifiers; VHF amplifiers; circuit optimisation; microwave power amplifiers; network synthesis; power amplifiers; radiofrequency amplifiers; switching circuits; 3 MHz to 11 GHz; class E power amplifiers; design equations; high-efficiency power amplifiers; low-order class-E circuit; optimization principles; power dissipation; switching transitions; Circuits; Frequency; Hafnium; High power amplifiers; Microwave amplifiers; Microwave transistors; Power dissipation; Shape; Switches; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705187