• DocumentCode
    1888023
  • Title

    Class E high-efficiency power amplifiers, from HF to microwave

  • Author

    Sokal, N.O.

  • Author_Institution
    Design Autom. Inc., Lexington, MA, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    7-12 June 1998
  • Firstpage
    1109
  • Abstract
    Class E power amplifiers achieve significantly higher efficiency than for conventional class B or C. Class E operates the transistor as an on/off switch and shapes the voltage and current waveforms to prevent simultaneous high voltage and high current in the transistor; that minimizes the power dissipation, especially during the switching transitions. In the published low-order class-E circuit, a transistor performs well at frequencies up to about 70% of its frequency of good class-B operation. An unpublished higher-order class E circuit operates well up to about double that frequency. The paper covers circuit operation, explicit design equations for the low-order class E circuit, optimization principles, and experimental results.
  • Keywords
    UHF power amplifiers; VHF amplifiers; circuit optimisation; microwave power amplifiers; network synthesis; power amplifiers; radiofrequency amplifiers; switching circuits; 3 MHz to 11 GHz; class E power amplifiers; design equations; high-efficiency power amplifiers; low-order class-E circuit; optimization principles; power dissipation; switching transitions; Circuits; Frequency; Hafnium; High power amplifiers; Microwave amplifiers; Microwave transistors; Power dissipation; Shape; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1998 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-4471-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1998.705187
  • Filename
    705187