DocumentCode :
1888060
Title :
Transition metal di-chalcogenides and their nanocomposite prospective field emitters
Author :
Khare, Ruchita T. ; More, Mahendra A. ; Late, Dattatray J.
Author_Institution :
Dept. of Phys., Savitribai Phule Pune Univ., Pune, India
fYear :
2015
fDate :
13-17 July 2015
Firstpage :
98
Lastpage :
99
Abstract :
Layered structured transition metal di-chalcogenides has attracted researchers as a substitute of graphene and its forms for various applications. In an attempt to explore field emission properties of these graphene analogues, synthesis and field emission behaviour of a few layered transition metal di-chalcogenides (TMDs) VS2, MoS2, MoO3 have been investigated at a base pressure of 1× 10-8 mbar. Furthermore, to improve the field emission properties, composites with RGO and respective oxides were synthesized and compared with the pristine ones. The TMDs and their composites is synthesized employing hydrothermal synthesis route. The preliminary results show that these TMD´s and their composites, when synthesized in a controlled manner, can serve as potential field emitters for future field emission based devices.
Keywords :
field emission; liquid phase deposition; molybdenum compounds; nanocomposites; nanofabrication; vanadium compounds; MoO3; MoS2; VS2; field emission based devices; field emission properties; field emitters; hydrothermal synthesis; layered structured transition metal dichalcogenides; nanocomposite; pressure 0.00000001 mbar; Crystals; Current density; Graphene; Iron; Sensors; Vacuum technology; TMDs; field emission (FE); reduced graphene oxide (RGO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
Type :
conf
DOI :
10.1109/IVNC.2015.7225545
Filename :
7225545
Link To Document :
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