Characterization and optimization of argon sputter etching of SiO/sub 2/ in the GEC reference cell

Summary form only given, as follows. In these experiments, the GEC reference cell is used to etch SiO/sub 2/ off 4" wafers. Etch rate and uniformity data are measured using a reflectometer, for wafers etched in a range of system operating conditions (power, pressure, and gas flow rate). These measurements are then used in a statistically designed orthogonal screening experiment. The goal of these experiments is two fold: to understand the major trends of each of the control parameters on the etch rate and uniformity and to use this data to determine the optimum etch conditions in the GEC reference cell. Both graphical and analysis of variance (ANOVA) techniques are performed on the etch rate and uniformity data to accomplish these goals.