DocumentCode :
1888378
Title :
High reliability of 0.07 μm pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates
Author :
Chou, Y.C. ; Leung, D. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Tsai, R. ; Eng, D. ; Wojtowicz, M. ; Nishimoto, M. ; Liu, P.H. ; Oki, A. ; Streit, D.
Author_Institution :
Space & Electron. Eng. Microelectron. Products & Processes, TRW Inc., Redondo Beach, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
365
Lastpage :
368
Abstract :
The high-reliability performance of G-band (180 GHz) MMIC amplifiers fabricated using 0.07 pm T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs on 3-inch wafers is reported. Low noise amplifiers were life-tested at two-temperatures (T1 = 200°C and T2 = 215°C) and stressed at Vds of 1 V and Ids of 250 mA/mm in a N2 ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) ≈ 2×106 hours at a channel temperature of 125°C. MTTF was determined by 2-temperature constant current stress using |ΔGmp| > 20% as the failure criteria. This is the first demonstration of the high reliability of 0.07 μm pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on a 3-inch InP production process. This result demonstrates a robust 0.07 μm pseudomorphic InGaAs/InAlAs/InP HEMT production technology for G-band applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; failure analysis; field effect MIMIC; field effect MMIC; gallium arsenide; indium compounds; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; life testing; millimetre wave amplifiers; 0.07 micron; 1 V; 1.7 eV; 125 degC; 180 GHz; 2×106 hour; 200 degC; 215 degC; 3 inch; 3-inch InP production process; EHF; G-band applications; InGaAs-InAlAs-InP; InP; InP substrates; LNA; MM-wave MMICs; MTTF; N2; N2 ambient; PHEMT MMICs; T-gate PHEMTs; activation energy; failure criteria; high-reliability performance; life testing; low noise amplifiers; median-time-to-failure; pseudomorphic HEMTs; robust HEMT production technology; two-temperature constant current stress; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Production; Robustness; Stress; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014426
Filename :
1014426
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1888378
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