High-performance Quantum Dots decorated graphene/ZnO-nanowire field-emission type field-effect transistor

A novel development of combining the vacuum field-emission and nanoelectronic nanowire field-effect transistor technique in the photodetector application. In the report, Quantum Dots(QDs) are decorated onto reduced graphene oxide(RGO) fragments to overcome the low light photo responses(~0.08A/W) of pristine graphene. In addition, exploiting high light absorption of quantum dots and RGO fragments, the photo current can be amplified for scales of times by the electron injection from excited quantum dots to ZnO nanowire wrapping around RGO fragments. The device was measured under the vacuum chamber of the scanning electron microscope(SEM) by a high-precision 4-probe nano-manipulator. This work will broaden a new researching thought to realize this vacuum microelectronic photodetector.