DocumentCode
1888399
Title
Early detection of oxide breakdown through in situ degradation sensing
Author
Singh, Prashant ; Zhiyoong Foo ; Wieckowski, Michael ; Hanson, Scott ; Fojtik, Matthew ; Blaauw, D. ; Sylvester, Dennis
Author_Institution
Univ. of Michigan, Ann Arbor, MI, USA
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
190
Lastpage
191
Abstract
We present an in situ approach to detect the initial onset of oxide breakdown in large-scale circuits for wearout detection and management. The detection is based on a change in the resistive behavior of the oxide from non-linear to linear. Two 65 nm test-chips show robustness under temperature variation and capture of the onset of failure after just 0.5% delay increase in a FIR filter.
Keywords
CMOS digital integrated circuits; FIR filters; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; CMOS test-chips; FIR filter; failure; in situ degradation sensing; large-scale circuits; oxide breakdown; resistive behavior; size 65 nm; temperature variation; wearout detection; Circuit testing; Condition monitoring; Degradation; Delay; Electric breakdown; Finite impulse response filter; Stress; Switches; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433990
Filename
5433990
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