Title :
Metamorphic InP/InGaAs heterojunction bipolar transistors under high-current and high temperature stress
Author :
Yang, Hong ; Wang, Hong ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The reliability of InP/InGaAs metamorphic heterojunction bipolar transistors (MHBTs) on GaAs substrates under excessive current density (100 kA/cm2) at high junction temperature (250°C) has been tested. Experimental data indicate that, by proper growth optimization of the strain relief buffer layer, MHBTs on GaAs substrates with electrical stability similar to that of HBTs on InP substrates could be achieved. It has been found that compared to MHEMTs, growth of a high quality metamorphic buffer is more critical for the stability of MHBTs
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; stability; 250 degC; GaAs; GaAs substrate; HBT reliability; InP-InGaAs; InP/InGaAs metamorphic HBTs; MHBTs; electrical stability; growth optimization; high current density; high junction temperature; high quality metamorphic buffer; high temperature stress; high-current stress; metamorphic heterojunction bipolar transistors; strain relief buffer layer; Buffer layers; Capacitive sensors; Current density; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Stability; Temperature; Testing;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014429
