Title :
Extremely wideband 0.18-μm CMOS compact distributed low-noise amplifier
Author :
Chirala, M. ; Guan, X. ; Huynh, C. ; Nguyen, C.
Author_Institution :
Z-Commun., Inc., San Jose, CA, USA
Abstract :
A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-μm CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 ± 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 × 0.37 mm2 chip size including RF pads.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; distributed amplifiers; low noise amplifiers; transmission lines; LNA; extremely wideband CMOS compact distributed low noise amplifier; frequency 0 GHz to 20 GHz; gain 7.8 dB; gain 8.2 dB; inductors; noise figure 3.4 dB to 5 dB; power 34.2 mW; size 0.18 mum; transmission lines; CMOS integrated circuits; Distributed amplifiers; Gain; Inductors; Noise figure; Power transmission lines; Transistors;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4244-4967-5
DOI :
10.1109/APS.2010.5561700
