Capabilities of low-cost high voltage RF power MOSFETs at HF and VHF

Author

Frey, R.

Author_Institution

Adv. Power Technol. Inc., Bend, OR, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

1117

Abstract

Plastic packaged power MOSFETs have found increasing acceptance in all fields of power electronic applications including new high power applications in the frequency range of 1 to 30 MHz. RF power sources for AM broadcasting, medical, industrial and semiconductor processing demand from hundreds to many kilo-Watts of power. In this paper, we compare the standard offerings of several vendors with a new line of inexpensive plastic packaged RF MOSFETs. MOSFET design, package layout, measurement circuits and performance characteristics are presented.

Keywords

frequency response; plastic packaging; power MOSFET; semiconductor device packaging; semiconductor device testing; 1 to 30 MHz; HF capabilities; HV RF power MOSFETs; MOSFET design; VHF capabilities; high voltage MOSFETs; low-cost power MOSFETs; measurement circuits; package layout; performance characteristics; plastic packaged power MOSFET; power electronic applications; Broadcasting; Circuits; Electronics packaging; Hafnium; MOSFETs; Plastic packaging; Power electronics; Radio frequency; Semiconductor device packaging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705189

Filename

705189