DocumentCode :
1888793
Title :
A 16Gb/s 1st-Tap FFE and 3-Tap DFE in 90nm CMOS
Author :
Sugita, H. ; Sunaga, Keita ; Yamaguchi, Kazuhiro ; Mizuno, M.
Author_Institution :
NEC, Sagamihara, Japan
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
162
Lastpage :
163
Abstract :
A 16 Gb/s 1st-tap FFE and 3-tap DFE is developed featuring 33% faster operation than conventional DFEs. The presented technique is employed for high-speed 1st-tap ISI equalization and for jitter reduction in equalized edges. By-path feedback and a voltage swing limiter have been developed to speed-up both 2nd-tap and 3rd-tap equalization. The DFE is fabricated in a 90 nm CMOS process, occupies 227×276 ¿m2, and consumes 69 mW from a 1.4 V supply operating at a BER of <10-12 over a channel with 22 dB loss at 8 GHz.
Keywords :
CMOS integrated circuits; decision feedback equalisers; error statistics; 1st-tap FFE; 3-tap DFE; BER; CMOS process; ISI equalization; bit rate 16 Gbit/s; frequency 8 GHz; high-speed multitap decision feedback equalizer; jitter reduction; loss 22 dB; power 69 mW; size 90 nm; voltage 1.4 V; voltage swing limiter; Circuit noise; Clocks; Decision feedback equalizers; Delay; Intersymbol interference; Jitter; Noise cancellation; Output feedback; Sampling methods; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5434005
Filename :
5434005
Link To Document :
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