Title :
Comparative review of (GaIn)(PAs), (AlGaIn)As, (GaIn)(NaS) and Ga(AsSb) based materials for 1.3 μm laser applications
Author_Institution :
Dept. of Phys., Philipps-Univ., Marburg, Germany
Abstract :
Summary form only given. Laser devices with emission wavelengths at 1.3 μm are of key importance for applications in data and telecommunication systems in particular for local area and metropolitan area networks. At present, primarily the InP-based (GaIn)(PAs) and (AlGaIn)As material systems have been applied to realize such laser structures. In recent years, novel material systems and heterostructures like (GaIn)(NAs) and Ga(AsSb) have gained increasing interest due to their unique physical properties. This review intends to summarize the present situation of the device performance both for edge-emitting as well as vertical cavity surface emitting (VCSEL) laser structures related to materials and heterostructure properties point of view.
Keywords :
III-V semiconductors; metropolitan area networks; optical fibre LAN; optical transmitters; semiconductor lasers; surface emitting lasers; (AlGaIn)As; (GaIn)(NaS); (GaIn)(PAs); 1.3 micron; Ga(AsSb); device performance; edge-emitting; emission wavelengths; heterostructure properties; laser applications; local area networks; metropolitan area networks; physical properties; vertical cavity surface emitting laser structures; Laser applications; Laser theory; Metropolitan area networks; Optical materials; Physics; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014445
