Comparative review of (GaIn)(PAs), (AlGaIn)As, (GaIn)(NaS) and Ga(AsSb) based materials for 1.3 μm laser applications

Author

Stolz, W.

Author_Institution

Dept. of Phys., Philipps-Univ., Marburg, Germany

fYear

2002

fDate

2002

Firstpage

379

Abstract

Summary form only given. Laser devices with emission wavelengths at 1.3 μm are of key importance for applications in data and telecommunication systems in particular for local area and metropolitan area networks. At present, primarily the InP-based (GaIn)(PAs) and (AlGaIn)As material systems have been applied to realize such laser structures. In recent years, novel material systems and heterostructures like (GaIn)(NAs) and Ga(AsSb) have gained increasing interest due to their unique physical properties. This review intends to summarize the present situation of the device performance both for edge-emitting as well as vertical cavity surface emitting (VCSEL) laser structures related to materials and heterostructure properties point of view.

Keywords

III-V semiconductors; metropolitan area networks; optical fibre LAN; optical transmitters; semiconductor lasers; surface emitting lasers; (AlGaIn)As; (GaIn)(NaS); (GaIn)(PAs); 1.3 micron; Ga(AsSb); device performance; edge-emitting; emission wavelengths; heterostructure properties; laser applications; local area networks; metropolitan area networks; physical properties; vertical cavity surface emitting laser structures; Laser applications; Laser theory; Metropolitan area networks; Optical materials; Physics; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014445

Filename

1014445