DocumentCode
1888847
Title
GaAs-based GaAsNSe/GaAs superlattices emitting at 1.5 /spl mu/m-wavelength region
Author
Uesugi, Katsuhiro ; Suemune, Ikuo
Author_Institution
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
fYear
2002
fDate
16-16 May 2002
Firstpage
385
Lastpage
388
Abstract
GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular beam epitaxy (MOMBE). Strong photoluminessence (PL) emission with wide luminescence line at 1.5 μm-wavelength region was observed. It was found that nonradiative recombination in GaAsNSe layers was suppressed by heavy Se doping. GaAsNSe alloy is expected to be a new material for the 1.5 μm-wavelength devices of the GaAs based ststem.
Keywords
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical transmitters; photoluminescence; semiconductor superlattices; superluminescent diodes; 1.5 micron; GaAsNSe-GaAs; GaAsNSe/GaAs; MOMBE; metalorganic molecular beam epitaxy; nonradiative recombination; optical-fiber networks; photoluminescence; superlattices; superluminescent diodes; wide luminescence line; Conducting materials; Doping; Gallium arsenide; Laser sintering; Lead; Luminescence; Photonic band gap; Superlattices; Temperature dependence; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location
Stockholm, Sweden
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014448
Filename
1014448
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