Title :
Fabrication and characterization of two-dimensional photonic crystal waveguides etched in InP-based heterostructure
Author :
Mulot, M. ; Anand, S. ; Swillo, M. ; Qiu, M. ; Jaskorzynska, B. ; Talneau, A.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
We demonstrate low-loss photonic-crystals (PCs) realized in InP/GaAsInP/InP by Ar/Cl2 based Chemically Assisted Ion Beam Etching (CAIBE). By optimizing the etching parameters so that the physical and the chemical components are balanced, we succeed in obtaining holes deeper than 2 μm even for a hole diameter as small as 220 nm. The quality of PCs etched in two different process conditions is compared by using the shape and the position of mode-gaps in PC waveguides as an assessment tool. PCs etched with an optimized process exhibit a loss parameter ε" as small as 0.18, which corresponds to a experimentally determined loss of 1 dB/100 μm in W3 PC waveguides.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical fabrication; optical losses; optical waveguides; sputter etching; 110 nm; 2 micron; 2D photonic crystal waveguides; Ar; Ar-Cl2; Ar/Cl2 based etching; Cl2; InP-GaAsInP-InP; InP-based heterostructure; chemically assisted ion beam etching; etching parameters; integrated optoelectronic applications; loss parameter; low-loss photonic-crystals; optimized process; photonic crystal characterization; photonic crystal fabrication; process conditions; Argon; Chemicals; Etching; Indium phosphide; Optical device fabrication; Personal communication networks; Photonic crystals; Plasma temperature; Principal component analysis; Shape;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014456
