DocumentCode
1889095
Title
Photoresponse of p-type silicon emitter array
Author
Shimawaki, Hidetaka ; Nagao, Masayoshi ; Masaoka, Bunpei ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mikio
Author_Institution
Grad. Sch. of Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
fYear
2015
fDate
13-17 July 2015
Firstpage
200
Lastpage
201
Abstract
Photoassisted electron emission from p-type silicon field emitter array with sub-micron gate aperture under illumination of blue laser pulses is investigated. The FEA device is designed to minimize the photogeneration of slow electrons outside the depletion layer. We present the optical response studies of the device by laser pulses.
Keywords
elemental semiconductors; laser beam effects; photocathodes; photoemission; silicon; Si; blue laser pulse; p-type silicon emitter array photoresponse; photoassisted electron emission; Apertures; Arrays; Cathodes; Electron beams; Logic gates; Photodetectors; Silicon; photoassisted emission; pulsed electron beam; silicon field emitter array;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225582
Filename
7225582
Link To Document