DocumentCode :
1889095
Title :
Photoresponse of p-type silicon emitter array
Author :
Shimawaki, Hidetaka ; Nagao, Masayoshi ; Masaoka, Bunpei ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mikio
Author_Institution :
Grad. Sch. of Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
fYear :
2015
fDate :
13-17 July 2015
Firstpage :
200
Lastpage :
201
Abstract :
Photoassisted electron emission from p-type silicon field emitter array with sub-micron gate aperture under illumination of blue laser pulses is investigated. The FEA device is designed to minimize the photogeneration of slow electrons outside the depletion layer. We present the optical response studies of the device by laser pulses.
Keywords :
elemental semiconductors; laser beam effects; photocathodes; photoemission; silicon; Si; blue laser pulse; p-type silicon emitter array photoresponse; photoassisted electron emission; Apertures; Arrays; Cathodes; Electron beams; Logic gates; Photodetectors; Silicon; photoassisted emission; pulsed electron beam; silicon field emitter array;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
Type :
conf
DOI :
10.1109/IVNC.2015.7225582
Filename :
7225582
Link To Document :
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