Uncooled hybrid receivers of direct detection of the MM-range on the basis of hot electrons bolometers based and Schottky diodes

Author

Sizov, F. ; Petriakov, V. ; Zabudsky, V. ; Krasilnikov, D. ; Smoliy, M. ; Dvoretski, S.

Author_Institution

V.E. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2012

fDate

10-14 Sept. 2012

Firstpage

110

Lastpage

111

Abstract

Uncooled narrow-gap mercury-cadmium-telluride (MCT) semiconductor thin layers grown on GaAs substrates hybridized with antennas on low permittivity dielectric substrates were considered as 128-144 GHz direct detection 6-element bolometers. Noise equivalent power (NEP) of such detectors in the observed frequency range v ≈ 128-144 GHz reaches NEP_300K ≈ 2.6×10^-10 W/Hz^1/2 (with calculated gain G ≈ 9 dBi). To compare the results obtained the measurements of GaAs conventional Schottky barrier diode (SBD) detectors were fulfilled in the same conditions for which the comparable to MCT bolometers NEP was obtained.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; antenna arrays; bolometers; dielectric materials; gallium arsenide; hot carriers; permittivity; semiconductor thin films; GaAs; MCT bolometer NEP; MCT semiconductor thin layer; MM-range; SBD detector; Schottky barrier diode; antenna array; direct detection 6-element bolometer; frequency 128 GHz to 144 GHz; hot electrons bolometer; low permittivity dielectric substrate; noise equivalent power; uncooled hybrid receiver; uncooled narrow-gap mercury-cadmium-telluride semiconductor thin layer; Antenna radiation patterns; Bolometers; Detectors; Gallium arsenide; Permittivity; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-1-4673-1199-1

Type

conf

Filename

6335906