DocumentCode :
1889124
Title :
Electrically injected 1.55 μm InP-based photonic crystal microcavity coherent light source
Author :
Sabarinathan, J. ; Zhou, W.-D. ; Yu, P.-C. ; Bhattacharya, P. ; Mogg, S. ; Hammar, Mattias
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2002
fDate :
2002
Firstpage :
425
Lastpage :
428
Abstract :
Microcavities with dimensions on the wavelength scale are being extensively investigated due to their ability to exhibit enhanced spontaneous emission, directional output and single-mode operation. Photonic crystals with single or multiple defects have emerged as the preferred way to obtain such microcavities. We have designed and fabricated a 1.55 μm electrically injected photonic crystal surface-emitting microcavity device using an InP-based heterostructure. The emission wavelength at 1.55 μm is an important wavelength for long haul optical communication applications.
Keywords :
III-V semiconductors; indium compounds; laser transitions; light coherence; light sources; microcavity lasers; optical communication equipment; photonic band gap; quantum well lasers; spontaneous emission; surface emitting lasers; 1.55 micron; InGaAsP QWs; InGaAsP-InP; InP-based heterostructure; InP-based photonic crystal microcavity; directional output; electrically injected microcavity; long haul optical communication applications; microcavity coherent light source; single-mode operation; spontaneous emission; surface-emitting microcavity device; Indium phosphide; Light sources; Microcavities; Mirrors; Optical fiber communication; Optical pumping; Optical surface waves; Photonic crystals; Spontaneous emission; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014458
Filename :
1014458
Link To Document :
بازگشت