Modeling of 2-dimensional and 3-dimensional etch profiles in high density plasma reactors

Summary form only given. In order to model the plasma etching process from plasma generation to etch profile evolution, processes from the macroscopic reactor scale to the microscopic feature scale must be simulated. An integrated Monte Carlo feature profile model (MCFPM) has been developed to examine the time evolution of etch profiles in high density plasma systems. By integrating the MCFPM with the hybrid plasma equipment model (HPEM), we are able to self-consistently determine the etch profiles for specific regions on the wafer in specific reactor geometry with specified parameters for power, chemistry, gas flow, etc. The latest improvements of the model include the effects of incoming particle angle and energy on reaction and reflection based on the results of molecular dynamics simulations.