Time dependence of fully-depleted SOI MOSFETs subthreshold current

Author

Eraghi, E. Assad ; Chen, J. ; Solomon, R. ; Chan, Thomas ; Ko, P. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

32

Lastpage

33

Abstract

It is shown that the subthreshold current and the threshold voltage of fully-depleted SOI (silicon-on-insulator) MOSFETs show a time-dependent behavior under certain front-gate and back-gate voltage conditions. An explanation for this behavior is provided. The SOI devices used in the study were MOSFETs on SIMOX (separation by implanted oxygen) wafers. The gate oxide thickness, silicon film thickness, and buried oxide thickness were approximately 118 Å, 700 Å, and 4000 Å respectively. The doping concentration was 2×10¹⁷ cm^-3

Keywords

insulated gate field effect transistors; semiconductor device testing; semiconductor-insulator boundaries; SIMOX wafers; back-gate voltage conditions; buried oxide thickness; doping concentration; film thickness; front gate voltage conditions; fully depleted SOI MOSFET; gate oxide thickness; subthreshold current; threshold voltage; time-dependent behavior; Capacitance; Doping; MOS devices; MOSFETs; Semiconductor films; Silicon; Steady-state; Subthreshold current; Threshold voltage; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162842

Filename

162842