Fabrication of two-dimensional InP photonic band-gap structures using inductively coupled plasma etching

Author

Djoudi, A. ; Legouézigou, L. ; Hubert, S. ; Sainson, S. ; Moussant, C. ; Chandouineau, J.-P. ; Pommereau, F. ; Duan, G.-H.

Author_Institution

Alcatel Optronics, Nozay, France

fYear

2002

fDate

2002

Firstpage

429

Lastpage

432

Abstract

A fabrication process of two-dimensional photonic crystals has been developed. Such a process consists of electron beam lithography, reactive ion etching of an intermediate dielectric layer and the etching of InP with inductively coupled plasma. Photonic crystal patterns such as waveguide Fabry-Perot cavities have been fabricated on InP based epitaxial structures. A depth to diameter ratio as high as 14 has been obtained for hole diameter varying from 200 nm to 240 nm. Optical characterisation of these fabricated photonic crystals showed excellent results.

Keywords

Fabry-Perot resonators; III-V semiconductors; electron beam lithography; indium compounds; integrated optics; optical fabrication; optical waveguides; photonic band gap; sputter etching; 100 to 220 nm; 2D photonic crystals; InP; InP based epitaxial structures; InP photonic band-gap structures; PBG structures; RIE; electron beam lithography; fabrication process; inductively coupled plasma; intermediate dielectric layer; optical characterisation; plasma etching; reactive ion etching; two-dimensional photonic crystals; waveguide Fabry-Perot cavities; Electron beams; Etching; Fabrication; Indium phosphide; Lithography; Optical waveguides; Photonic band gap; Photonic crystals; Plasma applications; Plasma waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014459

Filename

1014459