InP-based fine-structuring techniques for photonic devices

Author

Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

2002

fDate

2002

Firstpage

433

Lastpage

436

Abstract

Recent progress in dry etching technologies enabled realizations of ultra-fine-structures with superior verticality with a high aspect ratio. We applied a reactive-ion-etching (RIE) using a CH₄/H₂ mixture gas to GaInAsP/InP compound system which is widely used in photonic devices for wideband optical fiber communications, and realized new types of lasers for high performance operation, such as semiconductor/Benzocyclobutene (BCB) distributed Bragg reflector (DBR) lasers and vertical grating distributed feedback (VG-DFB) lasers consisting of a grating formed on the sidewalls of the stripe mesa. Furthermore, a distributed reflector (DR) laser consisting of the VG-DFB region integrated with the semiconductor/BCB DBR as the rear side reflector was realized for high output efficiency operation from the front facet. In this paper, we summarize present status and future prospects of these fine-structuring techniques based on GaInAsP/InP compound for long wavelength photonic devices.

Keywords

III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical fabrication; optoelectronic devices; semiconductor lasers; sputter etching; CH₄/H₂ mixture gas; DBR lasers; GaInAsP-InP; GaInAsP/InP compound system; H₂; InP; InP-based fine-structuring techniques; RIE; VG-DFB lasers; distributed Bragg reflector lasers; distributed reflector laser; dry etching technologies; high aspect ratio; long wavelength photonic devices; reactive-ion-etching; single-mode lasers; ultra-fine-structures; vertical grating distributed feedback lasers; wideband optical fiber communications; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Dry etching; Fiber gratings; Fiber lasers; Gas lasers; Indium phosphide; Laser feedback; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014460

Filename

1014460