DocumentCode :
1889195
Title :
Design issues and considerations for low-cost 3D TSV IC technology
Author :
Van der Plas, G. ; Limaye, P. ; Mercha, Abdelkarim ; Oprins, Herman ; Torregiani, C. ; Thijs, Steven ; Linten, D. ; Stucchi, Michele ; Guruprasad, K. ; Velenis, Dimitrios ; Shinichi, D. ; Cherman, V. ; Vandevelde, B. ; Simons, V. ; De Wolf, Ingrid ; Labie
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
148
Lastpage :
149
Abstract :
We investigate key design issues of a low-cost 3D Cu-TSV technology: impact of TSV on MOS devices and interconnect, reliability, thermal hot spots, ESD, signal integrity and impact on circuit performance. We experimentally verify their importance and propose changes in current design practices to enable low-cost systems.
Keywords :
MIS devices; circuit reliability; electrostatic discharge; three-dimensional integrated circuits; 3D Cu-TSV IC technology; ESD; MOS device; low-cost system; signal integrity; thermal hot spot; CMOS technology; Circuit noise; Costs; Electrostatic discharge; Isolation technology; Protection; Stacking; Testing; Through-silicon vias; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5434016
Filename :
5434016
Link To Document :
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