DocumentCode
1889195
Title
Design issues and considerations for low-cost 3D TSV IC technology
Author
Van der Plas, G. ; Limaye, P. ; Mercha, Abdelkarim ; Oprins, Herman ; Torregiani, C. ; Thijs, Steven ; Linten, D. ; Stucchi, Michele ; Guruprasad, K. ; Velenis, Dimitrios ; Shinichi, D. ; Cherman, V. ; Vandevelde, B. ; Simons, V. ; De Wolf, Ingrid ; Labie
Author_Institution
IMEC, Leuven, Belgium
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
148
Lastpage
149
Abstract
We investigate key design issues of a low-cost 3D Cu-TSV technology: impact of TSV on MOS devices and interconnect, reliability, thermal hot spots, ESD, signal integrity and impact on circuit performance. We experimentally verify their importance and propose changes in current design practices to enable low-cost systems.
Keywords
MIS devices; circuit reliability; electrostatic discharge; three-dimensional integrated circuits; 3D Cu-TSV IC technology; ESD; MOS device; low-cost system; signal integrity; thermal hot spot; CMOS technology; Circuit noise; Costs; Electrostatic discharge; Isolation technology; Protection; Stacking; Testing; Through-silicon vias; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5434016
Filename
5434016
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