Title :
Modulation of field emission current from ZnO nanowires by high voltage a-Si thin film transistor
Author :
Chen, X.M. ; Ou, H. ; Song, X.M. ; Chen, W.Q. ; She, J.C. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen
Author_Institution :
State Key Lab. of Display Mater. & Technol., Sun Yat-s en Univ., Guangzhou, China
Abstract :
Modulation of field emission current from ZnO nanowires (ZnO NWs) by a high voltage amorphous silicon thin film transistor (HVTFT) is reported. The emission current was modulated in about three orders of magnitude. Precise control and stabilization of emission current were achieved.
Keywords :
II-VI semiconductors; amorphous semiconductors; field emission; modulation; nanowires; silicon; thin film transistors; wide band gap semiconductors; zinc compounds; HVTFT; Si; ZnO; field emission current; high voltage amorphous silicon thin film transistor; nanowires; II-VI semiconductor materials; Iron; Logic gates; Modulation; Nanowires; Thin film transistors; Zinc oxide; ZnO nanowires; field emission; thin film transistor;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
DOI :
10.1109/IVNC.2015.7225591
