Title :
Effect of non-uniform current distribution in the via patterns on microelectronics reliability
Author :
Dixit, Anant D. ; Hirakawa, Kenneth ; Burghard, Andre
Author_Institution :
TRW Electron. Syst. Group, Redondo Beach, CA, USA
Abstract :
A lifetest experiment performed on ECL (emitter coupled logic) ring oscillators, to establish the reliability of circuits fabricated with an oxide-isolated Si bipolar process, displayed an unusual failure mode. Even though the metal current density was well below the electromigration-limited current density specified by MIL-M-38510, electromigration type failures were observed in a standard current-distributing via pattern at a specific location of the circuit. The metal deposition and etch process were carefully monitored and metal quality did not indicate any abnormality. A very careful data analysis showed that, at higher currents, the current crowding through a single via explained the low median time to failure. A uniform current distribution pattern is necessary to maintain quality circuit reliability. If multiple vias are required, each via chain should be placed in a separate routing path, with properly adjusted metal line widths between the vias to account for the via resistance and the metal line resistance ratio
Keywords :
bipolar integrated circuits; circuit reliability; current distribution; electromigration; emitter-coupled logic; integrated circuit testing; integrated logic circuits; life testing; logic testing; oscillators; ECL; current crowding; electromigration; emitter coupled logic; failure mode; lifetest; metal line resistance ratio; metal line widths; microelectronics reliability; nonuniform current distribution; ring oscillators; via patterns; via resistance; Condition monitoring; Coupling circuits; Current density; Current distribution; Data analysis; Electromigration; Etching; Logic circuits; Proximity effect; Ring oscillators;
Conference_Titel :
Reliability and Maintainability Symposium, 1993. Proceedings., Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0943-X
DOI :
10.1109/RAMS.1993.296820