0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Author

Grundbacher, R. ; Lai, R. ; Barsky, M. ; Tsai, R. ; Gaier, T. ; Weinreb, S. ; Dawson, D. ; Bautista, J.J. ; Davis, J.F. ; Erickson, N. ; Block, T. ; Oki, A.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

2002

fDate

2002

Firstpage

455

Lastpage

458

Abstract

We present the TRW 0.1 μm InP HEMT MMIC production technology that has been developed and used for state-of-the-art cryogenic LNA applications. The 0.1 μm InP HEMT devices typically show cutoff frequency above 200 GHz and transconductance above 1000 mS/mm. Aspects of device design and fabrication are presented which impact important parameters including the InP HEMT device gain, gate leakage current, and parasitic capacitance. One example of state-of-the-art cryogenic MMIC performance is a W-band cryogenic MMIC LNA operated at 20 degrees Kelvin that shows above 23 dB gain and a noise temperature of 30 to 40 K (0.45 to 0.6 dB noise figure) over the band of 80-105 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenic electronics; high electron mobility transistors; indium compounds; integrated circuit noise; 0.1 micron; 0.45 to 0.6 dB; 20 K; 200 GHz; 23 dB; 80 to 105 GHz; InP; InP HEMT; InP HEMT MMIC; W-band; X-band; cryogenic low noise amplifier; cutoff frequency; gain; gate leakage current; noise figure; noise temperature; parasitic capacitance; transconductance; Cryogenics; Cutoff frequency; Fabrication; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Production; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014466

Filename

1014466